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US 9,871,067 B2Granted
Infrared image sensor component
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Ying Wu, Li-Hsin Chu, Chung-Chuan Tseng, Chia-Wei Liu
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Abstract
An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.
Claims16
An infrared image sensor component comprising:
- a semiconductor substrate;
- an active pixel region disposed on the semiconductor substrate for receiving an infrared ray, wherein the active pixel region is made of a III-V compound material;
- and
- a transistor coupled to the active pixel region, wherein the transistor comprises:
- a doped III-V compound region;
- a gate metal stack disposed on the doped III-V compound region;
- and
- at least one ohmic metal contact disposed at at least one side of the gate metal stack, wherein the at least one ohmic metal contact is coupled to the active pixel region.
5 more elements
An infrared image sensor component comprising:
- a semiconductor substrate;
- a III-V compound layer stack comprising:
- a first III-V compound layer disposed on the semiconductor substrate;
- and
- a second III-V compound layer disposed on the first III-V compound layer, wherein the first and second III-V compound layers have different energy gaps;
- a transistor coupled to the III-V compound layer stack;
- and
- at least one pattern disposed above the III-V compound layer stack, wherein a portion of the III-V compound layer stack exposed from the at least one pattern forms an active pixel region for receiving an infrared ray.
5 more elements
Dependencies are inferred from the claim text.