Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a first semiconductor layer of a first conductivity type;
• a second semiconductor layer of a second conductivity type;
• a third semiconductor layer provided between the first semiconductor layer and the second semiconductor layer;
• a first transistor including a first gate electrode and a first amorphous semiconductor layer, the first gate electrode and the first amorphous semiconductor layer overlapping in a first direction, the first direction being from the first semiconductor layer toward the second semiconductor layer;
• a first layer;
• a first electrode;
• and
• a second electrode,
• the first gate electrode being provided between the second semiconductor layer and the first amorphous semiconductor layer,
• the first semiconductor layer further including a first region and a second region, the second region being arranged with the first region in a second direction intersecting the first direction,
• the second semiconductor layer being provided between the second region and the first layer,
• the third semiconductor layer being provided between the second region and the second semiconductor layer,
• the first electrode being provided between the first region and the first layer and electrically connected to the first region,
• the second electrode being provided between the second semiconductor layer and the first layer and electrically connected to the second semiconductor layer.