Field-effect transistors with a non-relaxed strained channel
AssigneeGlobalfoundries Inc.
InventorsKaren A. Nummy, Claude Ortolland
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Abstract
Device structures for a field-effect transistor and methods of forming such device structures using a device layer of a silicon-on-insulator substrate. A channel and an isolation region are formed in the device layer. The channel is located beneath a gate structure is formed on the device layer and is comprised of a semiconductor material under strain. A portion of the device layer is located between the first isolation region and the channel. The portion of the device layer is under a strain that is less than the strain in the semiconductor material of the channel.
Claims20
A device structure formed using a device layer of a silicon-on-insulator substrate, the device structure comprising:
- a gate structure on the device layer;
- a channel in the device layer, the channel located beneath the gate structure, and the channel comprised of a semiconductor material under a strain;
- and
- a first isolation region in the device layer,
- wherein a first portion of the device layer is located between the first isolation region and the channel, the channel extends over a full thickness of the device layer from the gate structure to a buried oxide layer of the silicon-on-insulator substrate, and the first portion of the device layer is under a strain that is less than the strain in the semiconductor material of the channel.
A method of forming a device structure using a device layer of a silicon-on-insulator substrate, the method comprising:
- forming a channel in the device layer;
- forming a first isolation region in the device layer such that a first portion of the device layer between the first isolation region and the channel;
- and
- forming a gate structure on the device layer;
- wherein the channel is located beneath the gate structure and is comprised of a semiconductor material under a first strain, the channel extends over a full thickness of the device layer from the gate structure to a buried oxide layer of the silicon-on-insulator substrate, and the first portion of the device layer is under a strain that is less than the first strain in the semiconductor material of the channel.
Dependencies are inferred from the claim text.