Semiconductor device and method for manufacturing same
AssigneeToshiba Memory Corporation
InventorsTsubasa Imamura, Atsushi Takahashi, Toshiyuki Sasaki
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Abstract
According to one embodiment, the stacked body includes a plurality of electrode layers stacked with an insulator interposed. The electrode layers have a plurality of terrace portions arranged in a stairstep configuration with a difference in levels. The insulating layer is provided above the terrace portions. The columnar portions extend in a stacking direction of the stacked body through the insulating layer and through the stacked body under the insulating layer. The columnar portions are insulative. The contact portions are provided at side surfaces of the columnar portions on the terrace portions. The contact portions are connected to the terrace portions.
Claims9
A semiconductor device, comprising:
- a foundation layer;
- a stacked body provided above the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, the electrode layers having a plurality of terrace portions arranged in a stairstep configuration with a difference in levels;
- an insulating layer provided above the terrace portions;
- a plurality of columnar portions extending in a stacking direction of the stacked body through the insulating layer and through the stacked body under the insulating layer, the columnar portions being insulative;
- and
- a plurality of contact portions provided at side surfaces of the columnar portions on the terrace portions, the contact portions being connected to the terrace portions, the contact portions being provided in tubular configurations surrounding the columnar portions.
Dependencies are inferred from the claim text.