Semiconductor device
AssigneeSK hynix Inc.
InventorSang Hyon Kwak
Life of this patent
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Abstract
Provided herein is a semiconductor device. The semiconductor device includes: a lower conductive pattern; a lower memory string conductive pattern disposed over the lower conductive pattern; a stack of upper memory string conductive patterns, wherein the stack is disposed over the lower memory string conductive pattern; a lower pad pattern extending from the lower memory string conductive pattern; upper pad patterns respectively extending from the upper memory string conductive patterns; a floating conductive pattern disposed under below the lower pad pattern, the floating conductive pattern overlapping the lower pad pattern; and a contact plug coming into contact with the lower pad pattern and overlapping the floating conductive pattern.
Claims20
A semiconductor device comprising:
- a lower conductive pattern;
- a lower memory string conductive pattern disposed over the lower conductive pattern;
- a stack of upper memory string conductive patterns, wherein the stack is disposed over the lower memory string conductive pattern;
- a lower pad pattern extending from the lower memory string conductive pattern;
- upper pad patterns respectively extending from the upper memory string conductive patterns;
- a floating conductive pattern disposed under below the lower pad pattern, the floating conductive pattern overlapping the lower pad pattern;
- and
- a contact plug coming into contact with the lower pad pattern and overlapping the floating conductive pattern.
A semiconductor device comprising:
- a pipe gate;
- a pipe channel layer embedded in the pipe gate;
- a drain side channel layer and a source side channel layer extending from the pipe channel layer;
- drain side word lines surrounding the drain side channel layer and stacked on top of one another spaced apart from each other;
- source side word lines surrounding the source side channel layer and stacked on top of one another spaced apart from each other;
- pad patterns extending from respective one ends of the drain side word lines or the source side word lines and forming a stepped structure;
- a floating conductive pattern disposed below a first pad pattern that is most adjacent to the pipe gate, among the pad patterns, the floating conductive pattern overlapping the first pad pattern;
- and
- a contact plug contacting the first pad pattern and extending in a direction in which the drain side channel layer and the source side channel layer extend, the contact plug overlapping the floating conductive pattern.
A semiconductor device comprising:
- a source line;
- a channel layer coupled to the source line;
- a source select line surrounding the channel layer;
- word lines disposed over the source select line and stacked spaced apart from each other in a direction in which the channel layer extends, the word lines surrounding the channel layer;
- a first pad pattern extending from one end of the source select line;
- upper pad patterns extending from respective one ends of the word lines and forming a stepped structure, the upper pad patterns formed such that the first pad pattern is exposed;
- a floating conductive pattern disposed below the first pad pattern and overlapping the first pad pattern;
- and
- a contact plug contacting the first pad pattern and extending in a direction in which the channel layer extends, the contact plug overlapping the floating conductive pattern.
Dependencies are inferred from the claim text.