Memory device

A memory device, having a plurality of static random-access memory (SRAM) cells, and the memory device comprising:

• a pickup area, extending in a first direction, wherein the pickup area comprises:
• at least one N-pickup structure, distributed along an N-pickup line, the N-pickup line extending in the first direction, wherein the at least one N-pickup structure receives a first substrate voltage;
• at least one P-pickup structure, alternatively disposed with the at least one N-pickup structure in the first direction and interleaving disposed with the at least one N-pickup structure in a second direction, wherein the second direction is perpendicular to the first direction, wherein the at least one P-pickup structure receives a second substrate voltage;
• and
• at least one dummy pickup structure, distributed in the first direction, opposite to the at least one P-pickup structure with respect to the N-pickup line;
• and
• a cell area, adjacent to the pickup area, wherein at least one of the SRAM cells is distributed in the second direction and forms at least one memory row, and the at least one memory row comprises an N-type well region in the second direction and two P-type well regions sandwiching the N-type well region in the second direction,
• wherein the at least one N-pickup structure provides the first substrate voltage to the respective corresponding N-type well region, and the at least one P-pickup structure provides the second substrate voltage to the at least one respective corresponding P-type well region.