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US 9,871,047 B1Granted
Memory structure and a method for forming the same
AssigneeUnited Microelectronics Corp.
InventorsYu-Lin Wang, Wei-Chi Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes a SRAM cell having transistors defined by fins and metal gate stack structures. A transistor and a corresponding pick up cell are disposed in an extension direction of the fins. The transistor and the corresponding pick up cell have metal gate stack structures of the same type.
Claims16
A memory structure, comprising:
- a SRAM cell including transistors defined by fins and metal gate stack structures;
- a pick up cell including transistors defined by fins and metal gate stack structures;
- wherein one of the transistors of the SRAM cell and a corresponding transistor of the pick up cell are disposed in an extension direction of the fins, and the one of the transistors of the SRAM cell and the corresponding transistor of the pick up cell have the same metal gate stack structures.
A method for forming a memory structure, comprising:
- forming fins and metal gate stack structures defining transistors of a SRAM cell and transistors of a pick up cell;
- wherein the fins and the metal gate stack structures are formed such that one of the transistors of the SRAM cell and a corresponding transistor of the pick up cell are disposed in an extension direction of the fins, and the one of the transistors of the SRAM cell and the corresponding transistor of the pick up cell have the same metal gate stack structures.
Dependencies are inferred from the claim text.