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US 9,871,045 B2Granted
Semiconductor device with damascene bit line and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsSeung-Jin Yeom, Noh-Jung Kwak, Chang-Heon Park, Sun-Hwan Hwang
Life of this patent
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Abstract
A semiconductor device includes first conductive patterns adjacent to each other and isolated by a trench including first and second trenches, a second conductive pattern formed in the first trench, and an insulating pattern partially filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern.
Claims19
A semiconductor device comprising:
- first conductive patterns adjacent to each other and isolated by a trench including first and second trenches;
- a second conductive pattern formed in the first trench;
- and
- an insulating pattern fully filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern,
- wherein the second trench is defined under the first trench, has a critical dimension smaller than that of the first trench and extends into an isolation layer formed in a substrate,
- wherein the second conductive pattern includes a protruded portion directly contacted to an active region formed in the substrate and defined by the isolation layer,
- wherein the second conductive pattern extends in a first direction and the protruded portion is protruded in a second direction which is perpendicular to the first direction.
4 more elements
A semiconductor device comprising:
- a pair of adjacent plugs isolated by a trench including first and second trenches;
- a bit line formed in the first trench;
- and
- an insulating layer fully filling the second trench under the bit line and formed between the adjacent plugs and the bit line,
- the second trench is defined under the first trench, has a critical dimension smaller than that of the first trench and extends into an isolation layer formed in a substrate,
- wherein the bit line includes a protruded portion directly contacted to an active region formed in the substrate and defined by the isolation layer,
- wherein the bit line extends in a first direction and the protruded portion is protruded in a second direction which is perpendicular to the first direction.
4 more elements
Dependencies are inferred from the claim text.