Semiconductor device with metal silicide blocking region and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-Hsiang Hung, Wei-Der Sun, Ching-Chen Hao
Life of this patent
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Abstract
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a gate stack on a semiconductor substrate. In some embodiments, the semiconductor device further includes a semiconductor element, such as for example, a resistor, on the semiconductor substrate. The semiconductor device includes a metal silicide layer on at least one of the gate stack, the source region, and the drain region. The semiconductor device also includes a blocking region in a portion of the semiconductor element. In some embodiments, the blocking region includes first dopants and second dopants with an atomic radius smaller than that of the first dopants.
Claims20
A semiconductor device, comprising:
- a gate stack on a semiconductor substrate;
- a source region and a drain region in the semiconductor substrate and adjacent to the gate stack;
- a resistor on the semiconductor substrate, wherein the resistor comprises a silicon material;
- a first metal silicide layer in the gate stack, the source region, and the drain region;
- a first blocking region in a top portion of the resistor, wherein the first blocking region comprises first dopants and second dopants with an atomic radius smaller than that of the first dopants, each of a top portion of the gate stack that is directly below the first metal silicide layer, a top portion of the source region that is directly below the first metal silicide layer, and a top portion of the drain region that is directly below the first metal silicide layer has a less concentration of the first dopants and of the second dopants than the first blocking region;
- and
- a second blocking region in a top portion of the semiconductor substrate, wherein the second blocking region comprises third dopants and fourth dopants, the third dopants are the same as the first dopants, the fourth dopants are the same as the second dopants, wherein
- the second blocking region is in the source region, and the first metal silicide layer over the source region is adjacent to and does not cover the second blocking region, or
- the second blocking region is in the drain region, and the first metal silicide layer over the drain region is adjacent to and does not cover the second blocking region.
A semiconductor device, comprising:
- a gate stack on a semiconductor substrate;
- a source region and a drain region in the semiconductor substrate and adjacent to the gate stack;
- a semiconductor element on the semiconductor substrate, wherein the semiconductor element comprises a silicon material;
- a first metal silicide layer in the gate stack, the source region, and the drain region;
- and
- a first blocking region in a top portion of the semiconductor element, wherein the first blocking region comprises first dopants and second dopants with an atomic radius smaller than that of the first dopants, and each of a top portion of the gate stack that is directly below the first metal silicide layer, a top portion of the source region that is directly below the first metal silicide layer, and a top portion of the drain region that is directly below the first metal silicide layer has a less concentration of the first dopants and of the second dopants than the first blocking region;
- and
- a second blocking region in a top portion of the semiconductor substrate, wherein the second blocking region comprises third dopants and fourth dopants, the third dopants are the same as the first dopants, the fourth dopants are the same as the second dopants, wherein
- the second blocking region is in the source region, and the first metal silicide layer over the source region is adjacent to and does not cover the second blocking region, or
- the second blocking region is in the drain region, and the first metal silicide layer over the drain region is adjacent to and does not cover the second blocking region.
Dependencies are inferred from the claim text.