Plasma protection diode for a HEMT device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKing-Yuen Wong, Chun-Wei Hsu, Chen-Ju Yu, Fu-Wei Yao, Jiun-Lei Jerry Yu, Fu-Chih Yang, Po-Chih Chen
Life of this patent
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Abstract
A silicon substrate having a III-V compound layer disposed thereon is provided. A diode is formed in the silicon substrate through an ion implantation process. The diode is formed proximate to an interface between the silicon substrate and the III-V compound layer. An opening is etched through the III-V compound layer to expose the diode. The opening is filled with a conductive material. Thereby, a via is formed that is coupled to the diode. A High Electron Mobility Transistor (HEMT) device is formed at least partially in the III-V compound layer.
Claims20
A semiconductor device, comprising:
- a transistor device disposed at least partially over a III-V compound layer;
- a conductive via disposed below the transistor;
- and
- a diode electrically coupled to the transistor through the conductive via, wherein the diode includes:
- a first doped portion that is disposed below and electrically coupled to the via;
- and
- a second doped portion that surrounds the first doped portion except an upper surface of the first doped portion, wherein the first doped portion and the second doped portion have different types of conductivity.
A semiconductor device, comprising:
- a III-V compound layer disposed over a substrate;
- a transistor device disposed at least partially over a III-V compound layer, wherein the transistor includes a source, a drain, and a gate;
- a conductive via that is electrically coupled to the gate, the source, the drain, or a metal pad disposed over the III-V compound layer;
- and
- a diode disposed in the substrate, wherein the diode is electrically coupled to the transistor through the conductive via, wherein the diode includes:
- a first doped portion that is disposed below and electrically coupled to the via;
- and
- a second doped portion that at least partially surrounds the first doped portion, one of the first and second doped portions is doped with an n-type dopant, and the other one of the first and second doped portions is doped with a p-type dopant.
A semiconductor device, comprising:
- a III-V compound layer disposed over a substrate;
- a protection diode formed in the substrate, wherein the protection diode includes a first portion and a second portion that has different type of conductivity than the first portion;
- and
- a transistor device disposed at least partially over a III-V compound layer, wherein the transistor includes a source, a drain, and a gate;
- wherein:
- the protection diode is electrically coupled to the transistor and only turns on to divert an amount of plasma charge of the transistor to the substrate.
Dependencies are inferred from the claim text.