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US 9,871,011 B2Granted
Semiconductor package using a contact in a pleated sidewall encapsulant opening
AssigneeAmkor Technology, Inc.
InventorsJae Yun Kim, Tae Kyung Hwang, Jin Han Kim, Jong Sik Paek, Kyoung Rock Kim, Byong Jin Kim, Jae Beum Shim
Life of this patent
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Abstract
A semiconductor package, and a method of manufacturing thereof, comprising a contact in a plated sidewall encapsulant opening, substantially as shown in and/or described in connection with at least one of the figures, as set forth more completely in the claims.
Claims21
A semiconductor device comprising:
- a semiconductor die comprising a first surface with a contact pad and a second surface opposite the first surface;
- a redistribution structure on the first surface of the semiconductor die electrically coupled to the contact pad;
- an encapsulant encapsulating the redistribution structure;
- an opening in the encapsulant above a portion of the redistribution structure, wherein sidewalls of the opening are substantially vertical;
- a conductive layer on the sidewalls of the opening in the encapsulant and on the contact pad, wherein the conductive layer forms a step shape when transitioning from the sidewalls to the contact pad;
- and
- a conductive interconnection structure above the portion of the redistribution structure and filling a remaining volume of the opening in the encapsulant not filled by the conductive layer.
4 more elements
A semiconductor device comprising:
- a semiconductor die comprising a first surface with a first contact pad and a second surface opposite the first surface;
- a redistribution structure on the first surface of the semiconductor die electrically coupled to the first contact pad;
- a second contact pad on the redistribution structure;
- an encapsulant encapsulating the redistribution structure and a portion of the second contact pad;
- an opening in the encapsulant above a portion of the second contact pad, wherein sidewalls of the opening are substantially vertical;
- a conductive layer on the sidewalls of the opening in the encapsulant and in contact with the second contact pad, wherein the conductive layer forms a step shape when transitioning from the sidewalls to the second contact pad;
- and
- a conductive interconnection structure on the second contact pad and filling a remaining volume of the opening in the encapsulant not filled by the conductive layer.
5 more elements
A method of fabricating a semiconductor device, the method comprising:
- providing a semiconductor die comprising a first surface with a contact pad and a second surface opposite the first surface;
- forming a redistribution structure on the first surface of the semiconductor die electrically coupled to the contact pad;
- encapsulating the redistribution structure utilizing an encapsulant;
- forming an opening in the encapsulant above a portion of the redistribution structure wherein sidewalls of the opening are substantially vertical;
- forming a conductive layer on the sidewalls of the opening in the encapsulant and on the contact pad, wherein the conductive layer forms a step shape when transitioning from the sidewalls to the contact pad;
- and
- placing a conductive interconnection structure above the portion of the redistribution structure, the conductive interconnection structure filling a remaining volume of the opening in the encapsulant not filled by the conductive layer.
4 more elements
Dependencies are inferred from the claim text.