Mark forming method and device manufacturing method
AssigneeNikon Corporation
InventorTomoharu Fujiwara
Life of this patent
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Abstract
A mark forming method includes: a step of forming, on a device layer of a wafer, an intermediate layer to which a polymer layer containing a block copolymer is adherable, the device layer including a shot area and a scribe line area; a step of removing a portion, of the intermediate layer, formed in the scribe line area; a step of exposing an image of a mark on the scribe line area and forming, based on the image of the mark, a mark including recessed portion; and a step of applying the polymer layer containing the block copolymer on the device layer of the wafer. When a circuit pattern is formed by using the self-assembly of the block copolymer, it is possible to form the mark simultaneously with the formation of the circuit pattern.
Claims10
A method for producing a device comprising:
- forming an intermediate layer on a predetermined layer of a substrate;
- removing a part of the intermediate layer, the part covering a mark formation area of the predetermined layer;
- forming a polymer layer containing a block copolymer on the intermediate layer;
- and
- processing the substrate on which the polymer layer is formed such that a pattern is formed in the predetermined layer.
A method for producing a device comprising:
- forming a mark in a predetermined layer of a substrate;
- forming a polymer layer including a block-copolymer on the predetermined layer;
- forming a self-assembly area in the polymer layer;
- removing a part of the self-assembly area;
- processing the predetermined layer by using the self-assembly area from which the part of the self-assembly area has been removed;
- forming a pattern in a different layer which is different from the predetermined layer and which is formed on the predetermined layer, by using the mark.
Dependencies are inferred from the claim text.