Semiconductor device and manufacturing method, and electronic apparatus

A method of manufacturing a semiconductor device, including:

• forming a first element in a semiconductor layer;
• forming a growth layer by growing a crystalline layer with aligned crystal axes on the semiconductor layer;
• and
• forming a second element, to be stacked on the first element of the semiconductor layer, on the growth layer,
• wherein a reentrant portion formed at an end portion of a measurement mark,
• wherein the measurement mark is utilized to execute relative adjustment before and after the forming of the growth layer, and
• wherein the measurement mark and a detection region for detecting the measurement mark are separated by a particular distance.

An electronic apparatus including a semiconductor device, wherein the semiconductor device comprises:

• a semiconductor layer in which a first element is present;
• a growth layer on which a second element, to be stacked on the first element of the semiconductor layer, is present,
• wherein the growth layer is composed of a crystalline layer with aligned crystal axes on the semiconductor layer;
• a reentrant portion present at an end portion of a measurement mark,
• wherein the measurement mark is utilized to execute relative adjustment before and after a formation of the growth layer;
• and
• a detection region to detect the measurement mark,
• wherein the measurement mark and the detection region are present on the semiconductor layer, and
• wherein the measurement mark and the detection region are separated by a particular distance.