Semiconductor arrangement having an overlay alignment mark with a height shorter than a neighboring gate structure

A semiconductor arrangement, comprising:

• an overlay alignment mark, comprising:
• a first dielectric overlying a first portion of a substrate;
• and
• a first polysilicon region over the first dielectric;
• a first shallow trench isolation (STI) structure disposed within a first trench defined by the substrate and spaced apart from the overlay alignment mark by a second portion of the substrate extending between the overlay alignment mark and the first STI structure, wherein a top surface of the first portion of the substrate lies in a different plane than a top surface of the second portion of the substrate;
• and
• a gate structure, comprising:
• a second dielectric;
• and
• a second polysilicon region over the second dielectric, wherein:
• a height of the first polysilicon region is less than a height of the second polysilicon region, and
• a height of the first dielectric is substantially equal to a height of the second dielectric.

A semiconductor arrangement, comprising:

• an overlay alignment mark, comprising:
• a first dielectric;
• and
• a first polysilicon region over the first dielectric, wherein:
• a sidewall of a portion of a substrate underlying the first dielectric, a sidewall of the first dielectric, and a sidewall of the first polysilicon region extending from a top surface of the first polysilicon region to a bottom surface of the first polysilicon region are substantially co-planar;
• and
• a gate structure, comprising:
• a second dielectric;
• and
• a second polysilicon region over the second dielectric, wherein:
• a sidewall of the second dielectric abuts a first top surface of the substrate, and
• a height of the first polysilicon region is less than a height of the second polysilicon region.