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US 9,870,995 B2Granted
Formation of copper layer structure with self anneal strain improvement
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJun-Nan Nian, Shiu-Ko Jangjian, Chi-Cheng Hung, Yu-Sheng Wang, Hung-Hsu Chen
Life of this patent
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Abstract
A copper layer structure includes a first copper layer, a second copper layer and a carbon-rich copper layer. The second copper layer is disposed over the first copper layer. The carbon-rich copper layer is sandwiched between the first copper layer and the second copper layer. A carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer.
Claims20
A copper layer structure, comprising:
- a substrate;
- a dielectric layer disposed on a surface of the substrate, wherein the dielectric layer has a via hole and a trench that is disposed over and communicates with the via hole, and the via hole and the trench pass through the dielectric layer, and the trench comprises a first portion, a second portion, and a third portion sequentially located over the via hole;
- a first copper layer filling the via hole and said first portion of the trench;
- a second copper layer disposed over the first copper layer and filling said third portion of the trench;
- and
- a carbon-rich copper layer filling said second portion and sandwiched between the first copper layer and the second copper layer, wherein a carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer, and the carbon concentration of the first copper layer is equal to the carbon concentration of the second copper layer.
3 more elements
A copper layer structure, comprising:
- a substrate comprising a dielectric layer, wherein the dielectric layer has a via hole and a trench that is disposed over and communicates with the via hole, and the via hole and the trench pass through the dielectric layer, and the trench comprises at least three portions sequentially located over the via hole;
- at least two copper layers, wherein a lowest one of the copper layers fills the via hole and a lowest one of said portions of the trench, and a top one of the copper layers fills a top one of said portions of the trench;
- and
- at least one carbon-rich copper layer arranged between the copper layers to separate the copper layers from each other, wherein a lowest one of the at least one carbon-rich copper layer fills one of said portions of the trench which is next to the lowest one of said portions of the trench, and the lowest one of the at least one carbon-rich copper layer is disposed on the lowest one of the copper layers, wherein a carbon concentration of the at least one carbon-rich copper layer is greater than a carbon concentration of each of the copper layers, and the carbon concentrations of the copper layers are equal to each other.
1 more element
A copper layer structure, comprising:
- a substrate comprising a circuit layer and a dielectric layer stacked on the circuit layer, wherein the dielectric layer has a via hole and a trench that is disposed over and communicates with the via hole, and the via hole and the trench pass through the dielectric layer to expose a portion of the circuit layer, and the trench comprises a first portion, a second portion, and a third portion sequentially located over the via hole;
- a first copper layer filling the via hole and said first portion and contacting said portion of the circuit layer;
- a carbon-rich copper layer disposed on and contacting the first copper layer and filling said second portion, wherein the carbon-rich copper layer contacts a sidewall of the trench;
- and
- a second copper layer disposed on and contacting the carbon-rich copper layer and filling said third portion, wherein the second copper layer contacts the sidewall of the trench, and a carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer, and the carbon concentration of the first copper layer is equal to the carbon concentration of the second copper layer.
2 more elements
Dependencies are inferred from the claim text.