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US 9,870,991 B1Granted
Semiconductor device
AssigneeSK hynix Inc.
InventorsDo Youn Kim, Hyoung Soon Yune
Life of this patent
Estimating the term…
Abstract
A semiconductor device may be provided. The semiconductor device may include conductive patterns surrounding a channel film. The conductive patterns may be stacked and spaced apart from one another. The semiconductor device may include a gate contact plug coupled to one of the conductive patterns. The semiconductor device may include support pillars penetrating the conductive patterns in a periphery of the gate contact plug.
Claims15
A semiconductor device, comprising:
- conductive patterns surrounding a channel film, the conductive patterns stacked and spaced apart from one another;
- a gate contact plug coupled to one of the conductive patterns;
- and
- support pillars penetrating the conductive patterns in a periphery of the gate contact plug, wherein a cross-section of at least one of the support pillars is a T shape.
1 more element
A semiconductor device, comprising:
- conductive patterns surrounding a channel film, the conductive patterns stacked and spaced apart from one another;
- a gate contact plug coupled to one of the conductive patterns;
- and
- a support pillar in a cross-sectional structure having an opened one side and surrounding the gate contact plug.
1 more element
Dependencies are inferred from the claim text.