Back to results
US 9,870,988 B2Granted
Method of producing a semiconductor device with through-substrate via covered by a solder ball
AssigneeAms AG
InventorsCathal Cassidy, Martin Schrems, Franz Schrank
Life of this patent
Estimating the term…
Abstract
A semiconductor substrate is provided with an annular cavity extending from a front side of the substrate to an opposite rear side. A metallization is applied in the annular cavity, thereby forming a through-substrate via and leaving an opening of the annular cavity at the front side. A solder ball is placed above the opening and a reflow of the solder ball is effected, thereby forming a void of the through-substrate via, the void being covered by the solder ball.
Claims7
A method of producing a semiconductor device, comprising:
- providing a semiconductor substrate with an annular cavity extending from a front side of the substrate to an opposite rear side;
- applying a metallization in the annular cavity, thereby forming a through-substrate via and leaving an opening of the annular cavity at the front side;
- placing a solder ball above the opening;
- and
- effecting a reflow of the solder ball, thereby forming a void of the through-substrate via, the void being covered by the solder ball.
2 more elements
Dependencies are inferred from the claim text.