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US 9,870,987 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeToshiba Memory Corporation
InventorsAkira Nakajima, Masaaki Hatano
Life of this patent
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Abstract
In one embodiment, a semiconductor device includes an insulator. The device further includes a plug provided in the insulator, the plug including a first barrier metal layer and a first conductive layer that is provided on the first barrier metal layer. The device further includes an interconnect provided outside the insulator, the interconnect being provided on the plug and the insulator and including the first barrier metal layer, the first conductive layer and a second conductive layer that is provided on the first conductive layer.
Claims9
A semiconductor device comprising:
- an insulator;
- a plug provided in the insulator, the plug including a first barrier metal layer and a first conductive layer that is provided on the first barrier metal layer;
- an interconnect provided outside the insulator, the interconnect being provided on the plug and the insulator and including the first barrier metal layer, the first conductive layer and a second conductive layer that is provided on the first conductive layer, and the first barrier metal layer including a first portion that is provided outside the insulator and is provided on an upper face of the insulator;
- and
- the second conductive layer is provided above the upper face of the insulator through the first portion of the first barrier metal layer, and is provided above the upper face of the insulator through no first conductive layer, wherein the first barrier metal layer comprises first and second metal layers, and the second conductive layer is provided above the upper face of the insulator through the first metal layer, and is provided above the upper face of the insulator through no second metal layer.
2 more elements
Dependencies are inferred from the claim text.