Semiconductor package with through silicon via interconnect
AssigneeMediatek Inc.
InventorsMing-Tzong Yang, Yu-Hua Huang, Wei-Che Huang
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Abstract
The invention provides a semiconductor package with a through silicon via (TSV) interconnect. An exemplary embodiment of the semiconductor package with a TSV interconnect includes a semiconductor substrate, having a front side and a back side. A contact array is disposed on the front side of the semiconductor substrate. An isolation structure is disposed in the semiconductor substrate, underlying the contact array. The TSV interconnect is formed through the semiconductor substrate, overlapping with the contact array and the isolation structure.
Claims6
A semiconductor package with a through silicon via (TSV) interconnect, comprising:
- a semiconductor substrate, having a front side and a back side;
- a contact array, disposed on the front side of the semiconductor substrate;
- a plurality of isolation structures comprising shallow trench isolation (STI) features, disposed in the semiconductor substrate, underlying the contact array;
- and
- a TSV interconnect, through the semiconductor substrate, overlapping with the contact array and the isolation structures, wherein the contact array comprises contacts, the isolation structures avert overlapping with the contacts, and isolation structures and the contacts are alternatively disposed, and each of the contacts is located between the isolation structures, wherein bottoms of the contacts lie on the front side of the semiconductor substrate.
Dependencies are inferred from the claim text.