Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorYuichi Onozawa
Life of this patent
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Abstract
Provided is a semiconductor device including a semiconductor substrate; a dummy trench that is formed on a front surface side of the semiconductor substrate; an emitter electrode that is formed above a front surface of the semiconductor substrate and includes a recessed portion that is a recess in an outer periphery thereof, as seen in a planar view; a dummy pad that is electrically connected to the dummy trench and has at least a portion thereof formed within the recessed portion, as seen in the planar view; and a dummy wire that electrically connects the emitter electrode and the dummy pad.
Claims10
A semiconductor device comprising:
- a semiconductor substrate;
- a dummy trench that is formed on a front surface side of the semiconductor substrate;
- an emitter electrode that is formed above a front surface of the semiconductor substrate and includes a recessed portion that is a recess in an outer periphery thereof, as seen in a planar view;
- a dummy pad that is electrically connected to the dummy trench and has at least a portion thereof formed within the recessed portion, as seen in the planar view;
- a dummy wire that electrically connects the emitter electrode and the dummy pad;
- and
- one or more emitter wires that each have a lead extending outside of the emitter electrode and electrically connect the emitter electrode and an external terminal, wherein
- the one or more emitter wires each have a connection point connecting to the emitter electrode both on the lead side of the one or more emitter wires and on the side that is opposite the lead side in a manner to sandwich the dummy pad, and
- the dummy wire has a connection point connecting to the emitter electrode on a side that is opposite a lead side of the one or more emitter wires in a manner to sandwich the dummy pad.
Dependencies are inferred from the claim text.