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US 9,870,958 B2Granted
Forming CMOSFET structures with different contact liners
AssigneeInternational Business Machinces Corporation
InventorsKangguo Cheng, Zuoguang Liu, Tenko Yamashita
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Abstract
A method of making a semiconductor device includes forming a first trench contact over a first source/drain region of a first transistor; forming a second trench contact over a second source/drain region of a second transistor; depositing a first liner material within the first trench contact; and depositing a second liner material within the second trench contact; wherein the first liner material and the second liner material include different materials.
Claims18
A semiconductor device, comprising:
- a first trench contact arranged on a top surface of a first source/drain region comprising a first metal liner disposed within the first trench contact, the first metal liner disposed directly on sidewalls of the first trench contact;
- a second trench contact arranged on a top surface of a second source/drain region comprising a second metal liner disposed within the second trench contact;
- and
- a mask arranged only over the first trench contact, a material of the mask disposed directly on the first metal liner to fill the first trench contact;
- wherein the first metal liner and the second metal liner comprise different materials, and the second trench contact is open such that the second metal liner is exposed.
2 more elements
Dependencies are inferred from the claim text.