Formation method of semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Yi-Jen Chen, Yung-Jung Chang
Life of this patent
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a semiconductor substrate and forming a dummy shielding layer over the semiconductor substrate and the gate stack. The method also includes forming source and drain features near the gate stack after the dummy shielding layer is formed. The method further includes removing the dummy shielding layer after the source and drain features are formed such that substantially no dummy shielding layer remains on the source and drain features.
Claims20
A method for forming a semiconductor device structure, comprising:
- forming a gate stack over a semiconductor substrate;
- forming a dummy shielding layer over the semiconductor substrate and the gate stack;
- forming source and drain features near the gate stack after the dummy shielding layer is formed, wherein the source and drain features are covered by the dummy shielding layer;
- and
- removing the dummy shielding layer after the source and drain features are formed such that substantially no dummy shielding layer remains on the source and drain features.
A method for forming a semiconductor device structure, comprising:
- forming a gate stack over a semiconductor substrate;
- forming an anti-reflection layer over the semiconductor substrate and the gate stack;
- forming a dummy shielding layer over the anti-reflection layer;
- performing an ion implantation process on the dummy shielding layer to form source and drain features, wherein the source and drain features are covered by the dummy shielding layer;
- and
- removing the dummy shielding layer after the source and drain features are formed.
A method for forming a semiconductor device structure, comprising:
- forming a gate stack over a semiconductor substrate;
- forming a sealing structure over a sidewall of the gate stack;
- forming an anti-reflection layer over the semiconductor substrate, the sealing structure, and the gate stack;
- forming a dummy shielding layer over the anti-reflection layer;
- forming source and drain regions in the semiconductor substrate after the dummy shielding layer is formed;
- and
- removing the dummy shielding layer after the source and drain regions are formed.
Dependencies are inferred from the claim text.