Semiconductor device and formation thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Guan-Lin Chen
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Abstract
A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a first wall extending along a first plane, the fin including a doped region defining a first furrow on a first side of the first plane. A dielectric is disposed within the first furrow, such that the dielectric is in contact with the first furrow between a first end of the dielectric and a second end of the dielectric. The first end is separated a first distance from the first plane. The dielectric disposed within the furrow increases the isolation of a channel portion of adjacent fins, and thus decreases current leakage of a FinFet, as compared to a FinFet including fins that do not include a dielectric disposed within a furrow.
Claims20
A method of forming a semiconductor device, comprising:
- forming a doped region in a fin,
- oxidizing the fin to form a dielectric feature on an outer surface of the doped region and an oxidation layer along a sidewall of the fin;
- removing the oxidation layer and a portion of the dielectric feature;
- and
- forming a shallow trench isolation feature adjacent the dielectric feature and the sidewall of the fin to conceal the dielectric feature.
A method of forming a semiconductor device, comprising:
- forming a doped region between a first substrate and a second substrate;
- etching the first substrate, the doped region, and the second substrate to define a fin;
- oxidizing the fin to form a dielectric feature on an outer surface of the doped region;
- etching the dielectric feature to reduce a thickness of the dielectric feature;
- and
- forming a shallow trench isolation feature adjacent the dielectric feature and the fin.
A method of forming a semiconductor device comprising:
- forming a doped region in a fin, wherein the fin has a first wall extending along a plane and the fin is disposed on a first side of the plane but not on a second side of the plane;
- oxidizing the fin to form a dielectric feature from at least some of the doped region;
- and
- removing a portion of the dielectric feature such that the dielectric feature is convex, wherein:
- a first end of the dielectric feature is disposed on the first side of the plane and is separated a first distance from the plane, and
- an outer most protruding point of the dielectric feature is disposed between the first end and a second end of the dielectric feature.
Dependencies are inferred from the claim text.