Contact process and contact structure for semiconductor device
AssigneeMacronix International Co., Ltd.
InventorsZong-Jie Ko, Hsiao-Leng Li
Life of this patent
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Abstract
A contact process for a semiconductor device is described. A substrate having a doped region and a dielectric layer over the doped region is provided. A contact hole is formed through the dielectric layer and exposing the doped region. An insulating liner layer is formed a in the contact hole. A portion of the insulating liner layer at a bottom of the contact hole is etch-removed and over-etching is performed. A conductive epitaxial layer is formed from the doped region in the contact hole, and then the contact hole is filled with a conductive material.
Claims10
A contact structure for a semiconductor device, comprising:
- a conductive epitaxial layer in a contact hole for a doped region in a substrate, wherein the conductive epitaxial layer completely covers a bottom surface of the contact hole and is embedded in a metal silicide layer on the doped region;
- and
- a conductive material on the conductive epitaxial layer, surrounded by an insulating liner layer on a sidewall of the contact hole and filling the contact hole,
- wherein entirety of the conductive epitaxial layer is substantially located below the conductive material.
Dependencies are inferred from the claim text.