US 9,870,942 B1Granted

Method of forming mandrel and non-mandrel metal lines having variable widths

AssigneeGlobalfoundries Inc.

InventorsXusheng Wu, Ziyan Xu, Chengwen Pei

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Abstract

A method includes providing a semiconductor structure having a silicon mandrel layer, a hardmask stack and a dielectric layer. A 1st portion and a 2nd portion of the mandrel layer are doped with a 1st concentration and a 2nd greater concentration of dopant respectively. 1st and 2nd mandrels are patterned into the 1st and 2nd portions of the mandrel layer respectively. The 1st and 2nd mandrels are oxidized in the same thermal oxidation process to form 1st oxidation spacers on sidewalls of the 1st mandrels and 2nd oxidation spacers on sidewalls of the 2nd mandrels. The 2nd oxidation spacers have a thickness that is greater than a thickness of the 1st oxidation spacers. The 1st and 2nd oxidation spacers are utilized to form 1st and 2nd metal lines respectively in the dielectric layer. The 1st and 2nd metal lines have a different thickness.

Claims20

Dependent claims

A method comprising:

providing a semiconductor structure having a silicon mandrel layer and a hardmask stack disposed respectively over a dielectric layer;
doping a 1st portion of the mandrel layer with a 1st concentration of dopant;
doping a 2nd portion of the mandrel layer with a 2nd concentration of dopant, the 2nd concentration of dopant being greater than the 1st concentration of dopant;
patterning 1st mandrels into the 1st portion of the mandrel layer;
patterning 2nd mandrels into the 2nd portion of the mandrel layer;
thermally oxidizing the 1st and 2nd mandrels in the same thermal oxidation process to form 1st oxidation spacers on sidewalls of the 1st mandrels and 2nd oxidation spacers on sidewalls of the 2nd mandrels, the 2nd oxidation spacers having a thickness that is greater than a thickness of the 1st oxidation spacers;
and
utilizing the 1st and 2nd oxidation spacers to form 1st and 2nd metal lines respectively in the dielectric layer, the 1st metal lines having a thickness that is different than a thickness of the 2nd metal lines.

5 more elements

A method comprising:

providing a semiconductor structure having a silicon mandrel layer and a hardmask stack disposed respectively over a dielectric layer;
doping a 1st portion of the mandrel layer with a 1st concentration of dopant;
doping a 2nd portion of the mandrel layer with a 2nd concentration of the same dopant, the 2nd concentration of dopant being greater than the 1st concentration of dopant;
patterning 1st mandrels into the 1st portion of the mandrel layer;
patterning 2nd mandrels into the 2nd portion of the mandrel layer;
thermally oxidizing the 1st and 2nd mandrels in the same thermal oxidation process to form 1st oxidation spacers on sidewalls of the 1st mandrels and 2nd oxidation spacers on sidewalls of the 2nd mandrels, the 2nd oxidation spacers having a thickness that is greater than a thickness of the 1st oxidation spacers;
and
utilizing the 1st and 2nd oxidation spacers to form 1st and 2nd metal lines respectively in the dielectric layer, the 1st metal lines having a thickness that is greater than a thickness of the 2nd metal lines.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/410,032Filed 19 Jan 2017
Granted: 16 Jan 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10W 20/089
By forming openings in the dielectric parts: using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
H10P 30/40
Ion implantation into wafers, substrates or parts of devices: into insulating materials
H10P 32/20
Diffusion of dopants within, into or out of wafers, substrates or parts of devices: diffusion for doping of insulating layers
H10P 50/283
Of inorganic materials: by chemical means