Methods of forming nanosheets on lattice mismatched substrates

A method of forming nanosheets for a semiconductor device, the method comprising:

• providing a silicon on insulator (SOI) handle wafer, the SOI handle wafer including a silicon layer and an SiO2 layer on the silicon layer;
• providing a first silicon donor wafer;
• bonding the SOI handle wafer and the first silicon donor wafer together to provide a bonded structure;
• debonding the bonded structure to provide an intermediate wafer including a plurality of silicon nanosheets and a plurality of SiO2 layers alternately stacked;
• and
• bonding the intermediate wafer to a second silicon donor wafer to provide a final wafer including a plurality of silicon nanosheets and a plurality of SiO2 layers alternately stacked, wherein the final wafer includes at least one more pair of silicon and SiO2 layers than the intermediate wafer.

A method of forming nanosheets for a semiconductor device, the method comprising:

• providing a silicon on insulator (SOI) handle wafer, the SOI handle wafer including a non-silicon layer and a dielectric layer on the silicon layer;
• providing a first non-silicon donor wafer;
• bonding the SOI handle wafer and the first non-silicon donor wafer together to provide a bonded structure;
• debonding the bonded structure to provide an intermediate wafer including a plurality of non-silicon nanosheets and a plurality of dielectric layers alternately stacked;
• and
• bonding the intermediate wafer to a second non-silicon donor wafer to provide a final wafer including a plurality of non-silicon nanosheets and a plurality of dielectric layers alternately stacked, wherein the final wafer includes at least one more pair of non-silicon and dielectric layers than the intermediate wafer.