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US 9,870,924 B2Granted
Diffusion agent composition, method of forming impurity diffusion layer, and solar cell
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsAtsushi Murota, Takaaki Hirai
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Abstract
A diffusion agent composition used in forming an impurity diffusion agent layer on a semiconductor substrate, and containing an impurity diffusion component, a silicon compound, and a solvent containing a solvent having a boiling point of 100° C. or less, a solvent having a boiling point of 120-180° C., and a solvent having a boiling point of 300° C.
Claims6
A diffusing agent composition used to form an impurity-diffusing agent layer on a semiconductor substrate, comprising:
- an impurity diffusion component (A);
- a silicon compound (B);
- and
- a solvent (C) including a solvent (C1) having a boiling point of 100 degrees Celsius or less, a solvent (C2) having a boiling point of 120 to 180 degrees Celsius, and a solvent (C3) having a boiling point of 240 to 300 degrees Celsius, wherein
- the solvent (C1) is contained in an amount of 70 percent by mass or greater with respect to the entire mass of solvent components of the diffusing agent composition, wherein the solvent (C2) is contained in an amount of 10 percent by mass or greater with respect to the entire mass of the solvent components of the diffusing agent composition, and wherein the solvent (C3) is contained in an amount of 10 percent by mass or greater with respect to the entire mass of the solvent components of the diffusing agent composition.
2 more elements
Dependencies are inferred from the claim text.