Growing III-V compound semiconductors from trenches filled with intermediate layers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hsin Ko, Cheng-Hsien Wu, Clement Hsingjen Wann
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Abstract
A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer. The plurality of semiconductor pillars is allocated in a periodic pattern. The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars.
Claims20
A method comprising:
- forming an insulation layer in a substrate, with portions of the substrate in, and separate from each other by, the insulation layer;
- removing the portions of the substrate to form recesses in the insulation layer;
- epitaxially growing a semiconductor material in the recesses to form semiconductor re-growth regions, wherein top ends of the semiconductor re-growth regions form pyramids;
- and
- epitaxially growing a III-V compound semiconductor film starting from the pyramids.
A method comprising:
- forming an isolation region having a top surface;
- forming a semiconductor pyramid, wherein the semiconductor pyramid comprises four triangular surfaces joining at a tip, and the four triangular surfaces have (iii) surface planes, and the semiconductor pyramid has bases joined to the top surface of the isolation region, and the forming the semiconductor pyramid comprises:
- forming a recess in the isolation region;
- and
- growing a semiconductor material in the recess, wherein the semiconductor material is grown starting from a semiconductor substrate underlying the isolation region, and a top portion of the semiconductor material forms the semiconductor pyramid;
- and
- performing an epitaxy to grow a III-V compound semiconductor film from the semiconductor pyramid.
A method comprising:
- forming an isolation region in a semiconductor substrate, with portions of the semiconductor substrate in, and separate from each other by, portions of the isolation region;
- removing the portions of the semiconductor substrate to form recesses in the isolation region, wherein the recesses comprises V-grooves extending into the semiconductor substrate;
- epitaxially growing a semiconductor material in the recesses until top portions of the semiconductor material form pyramids;
- and
- epitaxially growing a III-V compound semiconductor film starting from the pyramids, wherein the semiconductor material and the III-V compound semiconductor film are formed of different materials.
Dependencies are inferred from the claim text.