InGaAs film grown on Si substrate and method for preparing the same

A method for preparing an InGaAs film grown on a Si substrate, the method comprising:

• cleaning the Si substrate;
• pre-treating the Si substrate;
• removing an oxidation film from a surface of the Si substrate;
• growing a low temperature In0.4Ga0.6As buffer layer on the Si substrate at a temperature in a range of from 350 to 380° C. and under a pressure in a range of from 7.2×10−5 to 1.8×10−8 Pa, a V/III ratio being in a range of from 60 to 80, a growth rate being in a range of from 0.5 to 1 ML/s, the low temperature In0.4Ga0.6As buffer layer having a thickness in a range of from 4 to 8 nm;
• growing a high temperature In0.4Ga0.6As buffer layer on the low temperature In0.4Ga0.6As buffer layer at a temperature in a range of from 500 to 540° C. and under a pressure in a range of from 3.0×10−5 to 2.5×10−8 Pa, a V/III ratio being in a range of from 20 to 30, a growth rate being in a range of from 0.3 to 0.5 ML/s, the high temperature In0.4Ga0.6As buffer layer having a thickness in a range of from 6 to 12 nm;
• and
• growing an In0.53Ga0.47As epitaxial film on the high temperature In0.4Ga0.6As buffer layer at a temperature in a range of from 550 to 580° C. and under a pressure in a range of from 4.0×10−5 to 2.7×10−8 Pa, a V/III ratio being in a range of from 40 to 60, and a growth rate being in a range of from 0.6 to 1 ML/s;
• wherein:
• the Si substrate, the low temperature In0.4Ga0.6As buffer layer, the high temperature In0.4Ga0.6As buffer layer, and the In0.53Ga0.47As epitaxial film are arranged sequentially;
• and
• the low temperature In0.4Ga0.6As buffer layer and the high temperature In0.4Ga0.6As buffer layer have a total thickness in a range of from 10 to 20 nm.