Method of producing processing condition of plasma processing apparatus, and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorTakashi Dokan
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AssigneeTokyo Electron Limited
InventorTakashi Dokan
Estimating the term…
Disclosed is a method of producing a processing condition of a plasma processing apparatus. The method includes producing a plurality of processing conditions having different processing parameters, which are applied to an intermediate process performed between an ignition process that ignites plasma of a processing gas using a high frequency wave and a processing process that processes a workpiece by the plasma; sequentially performing the ignition process, the intermediate process applied with each of the processing conditions, and the processing process; measuring, when the intermediated process is changed to the processing process, a power of a reflected wave of the high frequency wave during the processing process in association with each of the processing conditions; and selecting, among the plurality of processing conditions, a processing condition in which the power of the reflected wave of the high frequency wave is minimized.
A method of producing a processing condition of a plasma processing apparatus, the method comprising:
A plasma processing apparatus comprising:
Dependencies are inferred from the claim text.