Methods for perforating two-dimensional materials using a broad ion field
AssigneeLockheed Martin Corporation
InventorPeter V. Bedworth
Life of this patent
Estimating the term…
Abstract
Perforating graphene and other two-dimensional materials with holes inclusively having a desired size range, a narrow size distribution, and a high hole density can be difficult to achieve. A layer in continuous contact with graphene, graphene-based materials and other two-dimensional materials can help promote hole formation. Processes for perforating a two-dimensional material can include exposing to an ion source a two-dimensional material in continuous contact with at least one layer, and interacting a plurality of ions from the ion source with the two-dimensional material and with the at least one layer. The ion source may be a broad ion beam.
Claims23
A process comprising:
- exposing a multilayered material to ions provided by an ion source, the multilayered material comprising a first layer comprising a two-dimensional first material and a second layer of a second material in contact with the first layer, the ions being provided with an ion energy ranging from 1.0 keV to 10 keV, and a flux from 0.1 nA/mm2 to 100 nA/mm2;
- and
- producing a plurality of holes in the two-dimensional first material by interacting a plurality of ions provided by the ion source, neutralized ions or a combination thereof with the two-dimensional first material and with the second material.
Dependencies are inferred from the claim text.