Frequency- and amplitude-modulated narrow-band infrared emitters

An infrared (IR) emission device, comprising:

• a plurality of fabricated nano-scale polaritonic material structures arranged on a substrate, the one polaritonic material structures comprising at least one phase change material;
• and
• a heater configured to apply heat to at least one of the polaritonic material structures, wherein the heater comprises boron-doped nanocrystalline diamond;
• wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission;
• and
• wherein a predetermined wavelength, a predetermined linewidth, or a predetermined amplitude of the IR emission from the at least one polaritonic material structure can be obtained by changing the local dielectric function of the phase change material in a predetermined manner.

An infrared (IR) emission device, comprising:

• a plurality of fabricated nano-scale polaritonic material structures arranged on a substrate, at least some of the polaritonic material structures being coated with a thermal dissipation material layer;
• and
• a heater configured to apply heat to at least one of the polaritonic material structures, wherein the heater comprises boron-doped nanocrystalline diamond;
• wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission;
• and
• wherein a predetermined amplitude, a predetermined wavelength, or a predetermined linewidth of the IR emission from the at least one polaritonic material structure can be obtained by selectively applying heat to and removing heat from the at least one polaritonic material structure.

An infrared (IR) emission device, comprising:

• a plurality of fabricated polaritonic material structures arranged on a thermal dissipation layer;
• and
• a heater configured to apply heat to at least one of the polaritonic material structures, wherein the heater comprises boron-doped nanocrystalline diamond;
• wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission;
• and
• wherein at least one of a predetermined amplitude, a predetermined wavelength, and a predetermined linewidth of the IR emission can be obtained by selectively applying heat to and removing heat from the at least one polaritonic material structure.

An infrared (IR) emission device, comprising:

• a first plurality of fabricated nano-scale first polaritonic material structures arranged on a substrate, the first polaritonic material structures comprising at least one ferroelectric material;
• and
• a second plurality of fabricated nano-scale second polaritonic material structures arranged on the substrate, the second polaritonic material structures comprising at least one phase change material;
• an electrical power source configured to induce a strain in the ferroelectric material;
• and
• a heater configured to apply heat to at least one of the first and second polaritonic material structures, wherein the heater comprises boron-doped nanocrystalline diamond;
• wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission;
• and
• wherein a predetermined spatially varying wavelength, a linewidth, or amplitude of the IR emission can be obtained by an application of a predetermined electrical bias from the electrical power source to a predetermined plurality of the first and/or second polaritonic material structures.