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US 9,870,835 B2Granted
Memory repairing method and memory device applying the same
AssigneeMacronix International Co., Ltd.
InventorShih-Hung Chen
Life of this patent
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Abstract
A memory repairing method and a memory device applying the same are disclosed, wherein the method comprises steps as follows: A memory device comprising at least one page having a plurality of cell strings is firstly provided. A regular data pattern is then provided to block at least two of the plurality of cell strings, and the blocked cells strings are marked as inaccessible.
Claims16
A memory repairing method, comprising:
- providing a memory device comprising at least one page having a plurality of cell strings;
- performing a memory testing process to figure out is there a defect memory cell involved in the memory device;
- performing an accessing process to determine whether the memory device is repairable by a memory repairing process;
- when the memory device is determined as unrepairable, dividing the plurality of cell strings into a plurality of subsets, wherein each of the subsets has at least two identical number of the cell strings;
- and
- selecting at least one of the cell strings from each of the subsets in accordance with a predetermined location sequence of the cell strings in each of the subsets, whereby the selected cell strings can be arranged in a regular order;
- and
- marking the selected cell strings as inaccessible.
5 more elements
A memory device, comprising:
- a plurality of bit lines;
- and
- at least one page, having a plurality of cell strings divided into a plurality of subsets each has at least two identical number of the cell strings;
- wherein at least one of the cell strings involved in each of the subsets is selected and marked as inaccessible in accordance with a predetermined location sequence of the cell strings in each of the subsets to make the selected cell strings arranged in a regular order.
1 more element
Dependencies are inferred from the claim text.