Nonvolatile memory device and method of programming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Wan Nam, Wandong Kim
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes a memory cell array, an address decoder, a read & write circuit and control logic. The memory cell array includes a plurality of memory blocks including a plurality of cell strings, each cell string including a plurality of memory cells stacked in a direction perpendicular to a substrate. The control logic controls operations so that in a program operation, when the selected word line satisfies a precharge condition, a program voltage to be applied to the selected word line is applied before a pass voltage to be applied to an unselected word line.
Claims13
A method of programming a nonvolatile memory device including a plurality of memory blocks including a plurality of cell strings, each cell string including a plurality of memory cells stacked in a direction perpendicular to a substrate and coupled to word lines, the method comprising:
- applying a program voltage to a selected word line and a pass voltage to an unselected word line in a same program loop to program a memory cell connected to the selected word line,
- wherein application of the program voltage to the selected word line is started before a start of application of the pass voltage to the unselected word line when the selected word line satisfies a precharge condition,
- wherein the memory blocks include a plurality of sub blocks, and wherein the precharge condition is satisfied when the selected word line is connected to a sub block from among the plurality of sub blocks that is in an erase state and that is between sub blocks from among the plurality of sub blocks that are in a program state and corresponds to a reference number in inverse order of a program order among word lines connected to sub blocks from among the plurality of sub blocks that are in the erase state.
A method of programming a nonvolatile memory device including a plurality of memory blocks including a plurality of cell strings, each cell string including a plurality of memory cells coupled to word lines, the method comprising:
- selecting a word line to have a program voltage applied thereto;
- and
- applying a program voltage to a selected word line and a pass voltage to an unselected word line in a same program loop to program a memory cell connected to the selected word line,
- wherein application of the program voltage to the selected word line is started before a start of application of the pass voltage to the unselected word line when the selected word line satisfies a precharge condition, and
- wherein application of the program voltage to the selected word line is started in concurrence with or after the start of application of the pass voltage to the unselected word line when the selected word line does not satisfy the precharge condition,
- wherein the memory blocks include a plurality of sub blocks, and wherein the precharge condition is satisfied when the selected word line is connected to a sub block from among the plurality of sub blocks that is in an erase state and that is last in a program order direction and corresponds to a reference number in inverse order of a program order among the word lines connected to sub blocks from among the plurality of sub blocks that are in the erase state.
A nonvolatile memory device comprising:
- a memory cell array comprising a plurality of memory blocks including a plurality of cell strings, each cell string among the plurality of cell strings including a plurality of memory cells stacked in a direction perpendicular to a substrate;
- an address decoder configured to select any of the memory blocks in response to an address;
- a read and write circuit configured to store data to be programmed in memory cells from among the plurality of memory cells connected to a selected word line among word lines of a selected memory block in a program operation;
- and
- a control logic configured to control operations so that application of a program voltage to the selected word line is started before application of a pass voltage to an unselected word line is started in a same program loop when the selected word line satisfies a precharge condition based on a level of the program voltage in the program operation,
- wherein the precharge condition is satisfied when the program voltage applied to the selected word line corresponds to a program loop within a first reference number in inverse order of a program loop proceeding order among a program step defined by a plurality of program loops.
Dependencies are inferred from the claim text.