Method of adjusting tilt using magnetic erase width feedback

A method of manufacturing a magneto-resistive device, comprising:

• extracting a first subset of bars and a second subset of bars from a first bar section of a wafer, the wafer including a plurality of bar sections stacked in a first direction, wherein each bar section extends in a second direction substantially perpendicular to the first direction, wherein each bar section of the plurality of bar sections includes a plurality of bars that are adjacent to one another, and wherein the first subset of bars includes at least two bars;
• obtaining a magnetic performance of the first subset of bars;
• determining, for the second subset of bars, an angle based on the magnetic performance, wherein the determined angle comprises an air bearing surface (ABS) tilt angle of the second subset of bars optimizing the magnetic performance of the magneto-resistive device;
• and
• processing the second subset of bars from the first bar section of the wafer based on the determined angle such that the ABS tilt angle of the second subset of bars is different than an ABS tilt angle of the first subset of bars.