US 9,869,939 B2 · Lithography process

Abstract

A method for being used in a lithography process is provided. The method includes receiving a first mask, a second mask and a substrate with a set of baseline registration marks. A first set of registration marks is formed on the substrate using the first mask and a first exposure tool, and a first set of overlay errors is determined. The first set of registration marks is removed and a second set of registration marks is formed on the substrate using the second mask and a second exposure tool. A second set of overlay errors is determined. A set of tool-induced overlay errors is generated from the first and second sets of overlay errors and used in fabricating a third mask. The third mask can then be used in the lithography process to accommodate the overlay errors caused by different exposure tools, different masks, and different mask writers.

Claims20

Dependent claims

A method comprising:

providing a substrate having a set of baseline registration marks;
forming a first set of registration marks, defined by a first mask, on the substrate;
determining a first set of overlay errors of the first set of registration marks with respect to the set of baseline registration marks;
forming a second set of registration marks, defined by a second mask, on the substrate;
determining a second set of overlay errors of the second set of registration marks with respect to the set of baseline registration marks;
generating a set of tool-induced overlay errors from the first set of overlay errors and the second set of overlay errors;
and
fabricating a device by using a third mask fabricated using the set of tool-induced overlay errors.

5 more elements

A method comprising:

providing a first mask fabricated by a first mask writer with a first grid table for exposing a first layer on the first exposure tool;
providing a second mask fabricated by a second mask writer with a second grid table for exposing a second layer on the second exposure tool;
receiving a substrate with a set of baseline registration marks;
forming a first resist layer on the substrate;
forming a first set of registration marks on the first resist layer using the first mask and the first exposure tool;
measuring a first set of overlay errors of the first set of registration marks with respect to the set of baseline registration marks;
after measuring the first set of overlay errors, removing the first resist layer and forming a second resist layer on the substrate;
forming a second set of registration marks on the second resist layer using the second mask and the second exposure tool;
measuring a second set of overlay errors of the second set of registration marks with respect to the set of baseline registration marks;
generating a set of tool-induced overlay errors from the first set of overlay errors and the second set of overlay errors;
and
fabricating a device using a third mask, the third mask fabricated using the set of tool-induced overlay errors.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/733,719Filed 8 Jun 2015 · continuation

Priority

15 Mar 2013

Published

US 2015/0268565 A124 Sep 2015

Granted

16 Jan 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

G03F 7/70633
Monitoring the printed patterns: overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the…
G03F 1/42
Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof: alignment or registration features,…
G03F 1/70
Preparation processes not covered by groups G03F1/20 - G03F1/50: adapting basic layout or design of masks to lithographic process requirements,…
G03F 7/20
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g.…

Family

Application13/832,945Parent of this continuation · filed 15 Mar 2013

US 2015/0268565 A1Pre-grant publication · published 24 Sep 2015

US 9,052,595 B2Parent of this continuation

US 2014/0272718 A1Published application

US 9,869,939 B2This patent

From the US filing history. Foreign family members aren’t listed.

Lithography process

Life of this patent

Lithography process

Life of this patent

Abstract

Claims20