Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTao-Min Huang, Chih-Tsung Shih, Chia-Jen Chen, Hsin-Chang Lee, Anthony Yen
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Abstract
Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion.
Claims20
A method, the method comprising:
- forming a reflective layer over a substrate, the reflective layer comprising a plurality of layers of different materials;
- forming a cap layer over the reflective layer;
- forming a first opening in the cap layer;
- forming a second opening in the reflective layer, the second opening being within the first opening, a width of the second opening being less than a width of the first opening;
- and
- forming an absorber layer in the first opening and the second opening.
A method, the method comprising:
- forming a first opening in a cap layer, the cap layer being over a reflective layer, the reflective layer being over a substrate;
- forming a second opening in the reflective layer, the second opening being within lateral boundaries of the first opening;
- and
- forming an absorber layer in the first opening and the second opening, the absorber layer extending over at least a portion of the reflective layer.
A photomask, comprising:
- a reflective layer over a substrate, the reflective layer comprising alternating layers of a first material and a second material;
- a capping layer over the reflective layer;
- and
- an absorber extending through the capping layer and into the reflective layer, wherein a portion of the absorber extends over an uppermost surface of the reflective layer.
Dependencies are inferred from the claim text.