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AssigneeTokyo Seimitsu Co., Ltd.
InventorsTakashi Ishimoto, Yuji Shigesawa, Akira Yamaguchi, Takashi Motoyama, Takenori Takahashi
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The present invention provides a semiconductor wafer inspection apparatus and a semiconductor wafer inspection method that can suppress warpage in a semiconductor wafer due to a temperature difference between the mounting surface of a table and the semiconductor wafer. In a prober of the present invention, a semiconductor wafer is heated to have a second temperature which is equal to or lower than a first temperature in a preheating step using an oven, and then the semiconductor wafer is placed on a mounting surface of a table which is heated to the first temperature. Thus, because a temperature difference between the mounting surface of the table and the semiconductor wafer is reduced in the prober, it is possible to suppress warpage in the semiconductor wafer that occurs right after the semiconductor wafer is placed on the mounting surface.
A semiconductor wafer inspection apparatus which brings a probe into contact with a semiconductor device on a semiconductor wafer placed on a heated table and inspects electric characteristics of the semiconductor device, comprising:
A semiconductor wafer inspection method in which a probe is brought into contact with a semiconductor device on a semiconductor wafer placed on a heated table and the semiconductor device is inspected for electric characteristics, comprising:
Dependencies are inferred from the claim text.