Method for evaluating performance of plasma wave transistor
AssigneeUnist (Ulsan National Institute of Science and Technology)
InventorsKyung Rok Kim, Jong Yul Park, Sung-Ho Kim
Life of this patent
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Abstract
A method for evaluating the performance of a plasma transistor comprises: setting a plasma wave velocity, which is adjusted by a gate overdrive voltage, as a first axis; setting an electronic drift velocity, which is adjusted by a drain-to-source voltage, as a second axis; setting a channel length as a third axis; and checking whether the plasma wave transistor is operated as a terahertz emitter according to a change in the performance parameter value of the plasma wave transistor on the basis of a relational expression among the first axis, the second axis, and the third axis.
Claims10
A method of evaluating a performance of a plasma wave transistor (PWT), the method comprising:
- setting a plasma wave velocity adjusted based on a gate overdrive voltage to be a first axis;
- setting an electron drift velocity adjusted based on a drain-to-source voltage to be a second axis;
- and
- generating a design window including a relational expression between the first axis and the second axis and verifying whether the PWT operates as a terahertz emitter based on a change in a performance parameter value of the PWT.
A method of evaluating a performance of a plasma wave transistor (PWT), the method comprising:
- setting a plasma wave velocity adjusted based on a gate overdrive voltage to be a first axis;
- setting an electron drift velocity adjusted based on a drain-to-source voltage to be a second axis;
- setting a channel length to be a third axis;
- and
- generating a design window including a relational expression of the first axis, the second axis, and the third axis and verifying whether the PWT operates as a terahertz emitter based on a change in a performance parameter value of the PWT.
A method of evaluating a performance of a plasma wave transistor (PWT), the method comprising:
- determining a physical condition used internally to a channel of a terahertz emitter in advance and inputting the physical condition to a performance parameter of a design window;
- generating visual emission phases, each corresponding to a plurality of substances for a PWT element, in response to a change in the performance parameter through a three-dimensional (3D) plot;
- and
- comparing the generated visual emission phases and displaying a comparison result on a display,
- wherein the design window sets a plasma wave velocity adjusted based on a gate overdrive voltage to be a first axis, sets an electron drift velocity adjusted based on a drain-to-source voltage to be a second axis, and sets a channel length to be a third axis, and
- wherein the design window represents whether the PWT operates as the terahertz emitter in response to a change in a performance parameter value of the PWT based on a relational expression of the first axis, the second axis, and the third axis.
Dependencies are inferred from the claim text.