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US 9,869,657 B2Granted
Ion sensitive device and method of fabrication
AssigneeElemental Sensor LLC
InventorsOliver King-Smith, Eric Kerstan Hoobler
Life of this patent
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Abstract
A sol-gel deposition technique that forms ion sensitive layers is compatible with CMOS fabrication methods and is applied to build sensors of concentrations of solutions of selected target ions. The ion sensitive sensor may be formed on an exposed portion of a signal trace of a printed circuit board. Additionally, the ion sensitive layer may be formed within an ion sensitive field effect transistor.
Claims35
A device comprising:
- (a) an ion sensitive layer;
- (b) an electrically conductive barrier layer as in contact with the ion sensitive layer, wherein the electrically conductive barrier layer is made of a non-metal material;
- (c) a metal layer in direct contact with the electrically conductive barrier layer;
- (d) a metal conductor;
- (e) a polysilicon gate electrically coupled to the metal conductor;
- (f) silicon dioxide (SiO2);
- and
- (g) a semiconductor substrate,
- wherein the device detects a concentration of at least one target ion in a liquid solution.
6 more elements
A device comprising:
- (a) at least one ion sensitive layer;
- (b) an electrically conductive barrier layer having a top surface and a bottom surface, wherein the electrically conductive barrier layer is made of a non-metal material and the top surface of the electrically conductive barrier layer is connected to the at least one ion sensitive layer;
- (c) a metal layer connected to the bottom surface of the electrically conductive barrier layer;
- (d) a metal conductor;
- (e) a polysilicon gate electrically coupled to the metal conductor;
- (f) silicon dioxide (SiO2);
- and
- (g) a semiconductor substrate,
- wherein the device detects a concentration of at least one target ion in a liquid solution.
6 more elements
A device comprising:
- (a) an ion sensitive layer;
- (b) a passivation layer, wherein the passivation layer is capable of being ground, polished, etched, or planarized;
- (c) an electrically conductive barrier layer connected to the ion sensitive layer, wherein the electrically conductive barrier layer is made of a non-metal material;
- (d) a top metal layer connected to the electrically conductive barrier layer;
- (e) a metal conductor;
- (f) a polysilicon gate electrically coupled to the metal conductor;
- (g) silicon dioxide (SiO2);
- and
- (h) a semiconductor substrate,
- wherein the device detects a concentration of at least one target ion in a liquid solution.
7 more elements
Dependencies are inferred from the claim text.