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US 9,869,027 B2Granted
Cleaning composition and method of manufacturing metal wiring using the same
AssigneesSamsung Display Co., Ltd., Ltcam Co., Ltd.
InventorsBong-Yeon Kim, Jin-Ho Ju, Jun-Hyuk Woo, Jung-Hwan Song, Seok-Ho Lee, Seong-Sik Jeon, Jong-Su Han
Life of this patent
Estimating the term…
Abstract
A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.
Claims13
A cleaning composition comprising:
- about 0.01 to about 5 wt % of a chelating agent, wherein the chelating agent comprises an amino acid compound, wherein the amino acid compound comprises at least one of glycine, ethylenediaminetetraacetic acid, and cyclohexanediaminetetraacetic acid;
- about 0.01 to about 0.5 wt % of an organic acid, wherein the organic acid comprises at least one of a lactic acid alkyl ester and an acetic acid alkyl ester;
- about 0.01 to about 1.0 wt % of an inorganic acid, wherein the inorganic acid comprises at least one of hydrochloric acid, phosphoric acid, nitric acid, sulfuric acid, hydrofluoric acid, bromic acid, and iodic acid;
- about 0.01 to about 5 wt % of an alkali compound, wherein the alkali compound comprises at least one of tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, and trimethylammonium chloride;
- and
- deionized water.
3 more elements
A cleaning composition comprising:
- about 0.01 to about 3 wt % of a corrosion inhibitor;
- about 0.01 to about 0.5 wt % of an organic acid, wherein the organic acid comprises at least one of a lactic acid alkyl ester and an acetic acid alkyl ester;
- about 0.01 to about 1.0 wt % of an inorganic acid, wherein the inorganic acid comprises at least one of hydrochloric acid, phosphoric acid, nitric acid, sulfuric acid, hydrofluoric acid, bromic acid, and iodic acid;
- about 0.01 to about 5 wt % of an alkali compound, wherein the alkali compound comprises at least one of tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, and trimethylammonium chloride;
- and
- deionized water.
3 more elements
A method of manufacturing a metal wiring, the method comprising:
- forming a first conductive layer on a substrate;
- forming a second conductive layer on the first conductive layer;
- cleaning the second conductive layer using a cleaning composition;
- forming a photoresist layer pattern on the second conductive layer, and
- etching the first conductive layer and the second conductive layer,
- wherein the cleaning composition comprises
- about 0.01 to about 5 wt % of a chelating agent, wherein the chelating agent comprises an amino acid compound, wherein the amino acid compound comprises at least one of glycine, ethylenediaminetetraacetic acid, and cyclohexanediaminetetraacetic acid;
- about 0.01 to about 0.5 wt % of an organic acid, wherein the organic acid comprises at least one of a lactic acid alkyl ester and an acetic acid alkyl ester;
- about 0.01 to about 1.0 wt % of an inorganic acid, wherein the inorganic acid comprises at least one of hydrochloric acid, phosphoric acid, nitric acid, sulfuric acid, hydrofluoric acid, bromic acid, and iodic acid;
- about 0.01 to about 5 wt % of an alkali compound, wherein the alkali compound comprises at least one of tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, and trimethylammonium chloride;
- and
- deionized water.
9 more elements
Dependencies are inferred from the claim text.