Methods and apparatus for depositing a cobalt layer using a carousel batch deposition reactor

A method of depositing a cobalt layer atop a substrate, comprising:

• (a) depositing a cobalt layer atop a first set of one or more substrates by exposing the first set of one or more substrates to a cobalt containing precursor while in a first processing position of a rotatable substrate support disposed in a process chamber;
• (b) rotating substrate support upon its central axis to move the first set of one or more substrates to a second processing position within the process chamber;
• and
• (c) annealing the first set of one or more substrates at the second processing position to remove contaminants from the cobalt layer,
• wherein the first set of one or more substrates are at the first processing position and exposed to the cobalt containing precursor to deposit the cobalt layer atop the first set of one or more substrates while simultaneously annealing a second set of one or more substrates at the second processing position within the process chamber, and
• wherein rotation of the substrate support simultaneously moves the first set of one or more substrates to the second processing position and the second set of one or more substrates to the first processing position, and
• wherein the annealing is at a second temperature greater than a first temperature at which the cobalt layer is deposited.

A method of depositing a cobalt layer atop a substrate, comprising:

• (a) depositing a cobalt layer atop a first set of one or more substrates disposed on a substrate support by exposing the first set of one or more substrates to a cobalt containing precursor while in a first processing position within a process chamber;
• (b) rotating the first set of one or more substrates into a second processing position within the process chamber while simultaneously rotating a second set of one or more substrates disposed on the substrate support into the first processing position;
• (c) annealing the first set of one or more substrates at the second processing position to remove contaminants from the cobalt layer, wherein the annealing is at a second temperature greater than a first temperature at which the cobalt layer is deposited;
• and
• (d) simultaneous with (c), depositing a cobalt layer atop the second set of one or more substrates by exposing the second set of one or more substrates to a cobalt containing precursor while in the first processing position.