Substrate processing apparatus including processing unit

A substrate processing apparatus in which a process with respect to substrates is performed, the substrate processing apparatus comprising:

• a lower chamber having an opened upper portion, the lower chamber having a passage, through which the substrates are accessible, in a side thereof;
• an external reaction tube closing the opened upper portion of the lower chamber to provide a process space in which the process is performed;
• an internal reaction tube disposed within the external reaction tube;
• a substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position at which the substrates are stacked within the substrate holder and a process position at which the process with respect to the substrates is performed;
• a gas supply unit supplying a reaction gas into the process space;
• and
• a processing unit disposed outside the external reaction tube to activate the reaction gas, thereby performing the process with respect to the substrates,
• wherein the gas supply unit comprises:
• a plurality of supply nozzles disposed outside the internal reaction tube, each supply nozzle having an end tip portion inserted into the internal reaction tube through a respective one of first through-holes of the internal reaction tube, the end tip portion of each supply nozzle being configured to be open and forming a supply hole of each supply nozzle, the reaction gas being discharged through each of the supply holes, the supply holes being disposed in a circumference direction along an inner wall of the internal reaction tube to have a phase difference and being disposed at heights different from each other, the first through-holes of the internal reaction tube being disposed in the circumference direction along an inner wall of the internal reaction tube to have a phase difference and a height different from each other;
• and
• a plurality of exhaust nozzles disposed outside the internal reaction tube, each exhaust nozzle having an end tip portion inserted into the internal reaction tube through a respective one of second through-holes of the internal reaction tube, the end tip portion of each exhaust nozzle being configured to be open and forming an exhaust hole of each exhaust nozzle, the exhaust nozzles, through the exhaust holes, suctioning non-reaction gases and byproducts within the process space, the exhaust holes being disposed in the circumference direction along the inner wall of the internal reaction tube to have a phase difference and being disposed at heights different from each other, the second through-holes of the internal reaction tube being disposed in the circumference direction along the inner wall of the internal reaction tube to have a phase difference and a height different from each other,
• wherein a center of each of the supply holes is symmetric to a center of a corresponding one of the exhaust holes with respect to a center of the internal reaction tube, and each of the supply holes is disposed at a same height as the corresponding one of the exhaust holes, so that a flow of the reaction gas has a phase difference in a vertical direction.