H2/O2 side inject to improve process uniformity for low temperature oxidation process
AssigneeApplied Materials, Inc.
InventorsAgus Sofian Tjandra, Christopher S. Olsen, Emre Cuvalci, Lara Hawrylchak
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Abstract
A method for forming an oxide layer having improved thickness uniformity on a substrate is disclosed. The method includes heating a substrate disposed in a processing chamber to a temperature less than about 700 degrees Celsius, flowing a first gas mixture into the processing chamber from a first gas inlet, and flowing a second gas mixture into the processing chamber from a second gas inlet. The composition and flow rate of the second gas mixture, and the composition and flow rate of the first gas mixture are controlled so the oxide layer formed on the substrate has improved thickness uniformity.
Claims17
A method for forming an oxide layer on a substrate, comprising:
- heating the substrate disposed in a processing chamber, wherein an edge of the substrate has a first temperature that is less than a second temperature at a center of the substrate;
- flowing a first gas mixture into the processing chamber from a first side gas inlet;
- flowing a second gas mixture into the processing chamber from a second side gas inlet, wherein the second gas mixture includes an oxygen containing gas and a hydrogen containing gas;
- controlling a flow rate of the second gas mixture, a composition of the second gas mixture, a flow rate of the first gas mixture, and a composition of the first gas mixture, wherein the second gas mixture includes oxygen gas and hydrogen gas, and has about 30 to 70 percent oxygen gas by volume and about 30 to 70 percent hydrogen gas by volume;
- and
- forming the oxide layer on the substrate by an oxidation process, wherein a thickness of the oxide layer has a non-uniformity of less than one percent.
A method for forming an oxide layer on a substrate, comprising:
- heating the substrate disposed in a processing chamber, wherein an edge of the substrate has a first temperature that is less than a second temperature at a center of the substrate;
- flowing a first gas mixture into the processing chamber from a first side gas inlet, wherein the first gas mixture has a flow rate of about 0.028 to 0.071 slm/cm2;
- flowing a second gas mixture into the processing chamber from a second side gas inlet, wherein the second gas mixture includes about 30 to 70 percent oxygen gas by volume and about 30 to 70 percent hydrogen gas by volume, and wherein the second gas mixture has a flow rate of about 0.007 to 0.035 slm/cm2;
- and
- forming the oxide layer on the substrate by an oxidation process, wherein a thickness of the oxide layer has a non-uniformity of less than one percent.
A method for forming an oxide layer on a substrate, comprising:
- heating the substrate disposed in a processing chamber;
- flowing a first gas mixture into the processing chamber from a first side gas inlet, wherein the first gas mixture includes a hydrogen containing gas and an oxygen containing gas;
- flowing a second gas mixture into the processing chamber from a second side gas inlet, wherein the second gas mixture includes an oxygen containing gas and a hydrogen containing gas;
- controlling a flow rate of the second gas mixture, a composition of the second gas mixture, a flow rate of the first gas mixture, a composition of the first gas mixture, and the temperature of the substrate, wherein the first gas mixture has a flow rate of about 0.028 to 0.071 slm/cm2 and the second gas mixture has a flow rate of about 0.007 to 0.035 slm/cm2;
- and
- forming the oxide layer on the substrate by an oxidation process.
Dependencies are inferred from the claim text.