Composition for etching

An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:

• a first inorganic acid;
• at least one of silane inorganic acid salts produced by reaction between a polyphosphoric acid and a silane compound, wherein the at least one of silane inorganic acid salts includes a compound represented by a first formula:
• where i) R1 is selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, ii) n1 is one of integer numbers from 1 to 4,iii) m1 is one of integer numbers from 1 to 10, and iv) each one of R2 to R4 is hydrogen;
• and
• a solvent, and
• wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the polyphosphroic acid, and the solvent comprising the remaining balance of the wt % of the composition.

An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:

• a first inorganic acid;
• at least one of siloxane inorganic acid salts generated through reaction between a second inorganic add and a siloxane compound;
• and
• a solvent,
• wherein the second inorganic add is one selected from the group consisting of a sulfuric add, a fuming sulfuric add, and a combination thereof, and
• wherein the composition comprises about 0.01 to about 15 wt % of the at least one of siloxane inorganic add salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.

A etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:

• a first inorganic acid;
• at least one of siloxane inorganic acid salts produced through reaction induced between a second inorganic acid including a nitric acid and a siloxane compound;
• and
• a solvent, and
• wherein the composition comprises about 0.01 to about 15 wt % of the at least one of siloxane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.

An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:

• a first inorganic acid;
• at least one of silane inorganic acid salts generated by reaction induced between a second inorganic acid and a first silane compound;
• a second silane compound;
• and
• a solvent,
• wherein the second inorganic acid is one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, an anhydrous phosphoric acid, a pyrophosphoric acid, a polyphosphoric acid, and a combination thereof,
• wherein the first silane compound and the second silane compound are one selected from the group consisting of compounds represented by a tenth formula, compounds represented by an eleventh formula, and a combination thereof,
• wherein the tenth formula is:
• and
• wherein the eleventh formula is:
• where i) each one of R1 to R10 is selected from the group consisting of hydrogen, halogen, (C1-C10) alkyl, (C1-C10) alkoxy, and (C6-C30) aryl, ii) at least one of R1 to R4 is one of halogen and (C1-C10) alkoxy, iii) at least one of R5 to R10 is one of halogen and (C1-C10) alkoxy, and iv) n is one of integer numbers from 1 to 10, and
• wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.