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US 9,868,131 B2Granted
Atomic layer deposition with plasma source
AssigneePicosun Oy
InventorsVaino Kilpi, Wei-Min Li, Timo Malinen, Juhana Kostamo, Sven Lindfors
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Abstract
The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
Claims11
A method comprising:
- operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions;
- and
- allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle, the widening radical in-feed part being a deformable in-feed part;
- and
- using the deformable in-feed part which is deformable between a contracted shape and an extended shape by at least one mechanical actuator.
2 more elements
A plasma atomic layer apparatus, comprising:
- a gas line from an inactive gas source to a widening radical in-feed part opening towards a reaction chamber;
- and
- a control system configured to allow gas from the inactive gas source to flow into in-feed part substantially during a whole deposition cycle, and
- the plasma atomic layer deposition reactor being configured to deposit material in the reaction chamber on at least one substrate by sequential self-saturating surface reactions;
- wherein said widening radical in-feed part is deformable, and the apparatus comprises at least one mechanical actuator to deform the in-feed part between a contracted shape and an extended shape.
2 more elements
A method, comprising:
- operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions;
- allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle;
- providing the deposition reactor with an elevator coupled to the in-feed part;
- and
- deforming the in-feed part by the elevator so as to allow loading of the at least one substrate into the reaction chamber.
2 more elements
Dependencies are inferred from the claim text.