Printed circuit, thin film transistor and manufacturing method thereof

A manufacturing method of a thin film transistor, comprising:

• performing a first printing process to form a patterned conductive layer on a substrate, wherein the patterned conductive layer comprises a plurality of metal nanostructures;
• performing a second printing process to form a metal oxide precursor layer on the patterned conductive layer, the metal oxide precursor layer covering the patterned conductive layer, wherein the metal oxide precursor layer comprises a metal oxide precursor and a solvent;
• and
• performing a heating process to remove the solvent in the metal oxide precursor layer and transforming the metal oxide precursor in the metal oxide precursor layer to a metal oxide, so as to form a metal oxide layer on a surface of the metal nanostructures, the metal oxide layer aggregates in a space at an intersection of the metal nanostructures;
• forming an active layer on the substrate to cover the patterned conductive layer and the metal oxide layer and fill a space between the patterned conductive layer;
• forming a dielectric layer on the substrate to cover the active layer;
• and
• forming a gate on the dielectric layer,
• wherein the metal oxide layer formed on the surface of the metal nanostructures has a thickness of 0.1 nm to 10 nm.