Solid-state imaging device, signal processing method of solid-state imaging device, and electronic apparatus

An imaging device comprising:

• a pixel array section having a first photodiode and a second photodiode adjacent to each other;
• a first transfer transistor,
• a second transfer transistor,
• a floating diffusion coupled to the first photodiode through the first transfer transistor and the second photodiode through the second transfer transistor;
• and
• a first color filter covering the first photodiode and the second photodiode, wherein,
• the first photodiode and the second photodiode are formed in a silicon substrate,
• the first color filter is provided on one side of the silicon substrate,
• each gate electrode of the first and second transfer transistors is provided on the other side of the silicon substrate,
• a center of a microlens is located on one of the first and the second photodiodes,
• sides of each of the first and the second photodiodes in a first direction are different lengths than sides in a second direction that is perpendicular to the first direction, and
• a diameter of the microlens located on the one of the first and second photodiodes is less than the length of the side of the one of the first and second photodiodes in the first direction and is greater than the length of the side of the one of the first and second photodiodes in the second direction.