Tuning capacitance to enhance FET stack voltage withstand

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming a first of said series coupled stacked transistors of a first intrinsic drain-source capacitance Cds;
• forming a second of said series coupled stacked transistors of a second intrinsic Cds, wherein said second intrinsic Cds differs by at least a predetermined amount to said first intrinsic Cds;
• forming a plurality of internal nodes between pairs of adjacent transistors of said stack of series coupled transistors;
• and
• coupling at least one compensation capacitor across at least two of said plurality of internal nodes to voltage balance said stack of series coupled transistors.

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming a first of said series coupled stacked transistors of a first intrinsic drain-source capacitance Cds;
• forming a second of said series coupled stacked transistors of a second intrinsic Cds, wherein said second intrinsic Cds differs by at least a predetermined amount to said first intrinsic Cds;
• forming a bottom endnode at a bottom of said stack of series coupled transistors;
• forming a plurality of internal nodes between pairs of adjacent transistors of said stack of series coupled transistors;
• and
• coupling at least one compensation capacitor across at least one of said plurality of internal nodes and said bottom endnode to voltage balance said stack of series coupled transistors.

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming a first of said series coupled stacked transistors of a first intrinsic drain-source capacitance Cds;
• forming a second of said series coupled stacked transistors of a second intrinsic Cds, wherein said second intrinsic Cds differs by at least a predetermined amount to said first intrinsic Cds;
• forming a top endnode at a top of said stack of series coupled transistors;
• forming a bottom endnode at a bottom of said stack of series coupled transistors;
• and
• coupling at least one compensation capacitor across said top endnode and said bottom endnode to voltage balance said stack of series coupled transistors.

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming a first of said series coupled stacked transistors of a first intrinsic drain-source capacitance Cds;
• forming a second of said series coupled stacked transistors of a second intrinsic Cds, wherein said second intrinsic Cds differs by at least a predetermined amount to said first intrinsic Cds;
• forming a top endnode at a top of said stack of series coupled transistors;
• forming a bottom endnode at a bottom of said stack of series coupled transistors;
• forming a plurality of internal nodes between pairs of adjacent transistors of said stack of series coupled transistors;
• and
• coupling at least one compensation capacitor across at least one of:
• i) said top endnode and at least one of said plurality of internal nodes, ii) at least two of said plurality of internal nodes, iii) at least one of said plurality of internal nodes and said bottom endnode, and iv) said top endnode and said bottom endnode, to voltage balance said stack of series coupled transistors.

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming a first of said series coupled stacked transistors of a first intrinsic drain-source capacitance Cds;
• forming a second of said series coupled stacked transistors of a second intrinsic Cds, wherein said second intrinsic Cds differs by at least a predetermined amount to said first intrinsic Cds;
• forming a plurality of internal nodes between pairs of adjacent transistors of said stack of series coupled transistors;
• and
• coupling at least one compensation capacitor across at least one of said plurality of internal nodes and ground to voltage balance said stack of series coupled transistors.

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming said series coupled stacked transistors, wherein at least one of said series coupled stacked transistors has a lower intrinsic Cds and wherein at least another of said series of coupled stacked transistors has a higher intrinsic Cds;
• establishing a difference between said higher intrinsic Cds and said lower intrinsic Cds of a predetermined amount;
• forming a plurality of internal nodes between pairs of adjacent transistors of said stack of series coupled transistors;
• forming a plurality of gate insulation compensation capacitors;
• and
• coupling at least one gate insulation compensation capacitor across at least two of said plurality of internal nodes to voltage balance said stack of series coupled transistors.

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming a plurality of internal nodes between pairs of adjacent transistors of said stack of series coupled transistors;
• coupling at least one compensation capacitor across at least one of said plurality of internal nodes and ground to voltage balance said stack of series coupled transistors;
• forming a plurality of gate resistive impedances of said stack of series coupled transistors;
• and
• forming a plurality of gate capacitive impedances of said stack of series coupled transistors, wherein at least one of said plurality of gate resistive impedances and at least one of said plurality of gate capacitive impedances combine to form a low pass filter.

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming at least one of said series coupled stacked transistors having an intrinsic drain-source capacitance Cds;
• forming internal nodes between adjacent transistors of said stack of series coupled transistors, at least one of said internal nodes having an internal node capacitance Cpd;
• and
• establishing a ratio of said internal node capacitance Cpd to said intrinsic drain-source capacitance Cds of less than a predetermined value.

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming said series coupled stacked transistors, wherein at least one of said series coupled stacked transistors has a lower intrinsic Cds and wherein at least another of said series of coupled stacked transistors has a higher intrinsic Cds;
• establishing a difference between said higher intrinsic Cds and said lower intrinsic Cds of a predetermined amount;
• forming at least one internal node between a pair of adjacent transistors of said stack of series coupled transistors, said at least one internal node having an internal node capacitance Cpd;
• and
• establishing a ratio of said internal node capacitance Cpd to said lower intrinsic Cds of less than a predetermined value.

A method of balancing voltage distribution across a stack of series coupled transistors, the method comprising:

• forming a first of said series coupled stacked transistors of a first intrinsic drain-source capacitance Cds;
• forming a second of said series coupled stacked transistors of a second intrinsic Cds, wherein said second intrinsic Cds differs by at least a predetermined amount to said first intrinsic Cds;
• forming a top endnode at a top of said stack of series coupled transistors;
• forming a plurality of internal nodes between pairs of adjacent transistors of said stack of series coupled transistors;
• and
• coupling one or more compensation capacitors across intrinsic Cds's of the stacked transistors,
• to voltage balance said stack of series coupled transistors.