Power amplification circuit and transmitter
AssigneeHuawei Technologies Co., Ltd.
InventorsXiaomin Zhang, An Huang, Liuyan Jiao
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AssigneeHuawei Technologies Co., Ltd.
InventorsXiaomin Zhang, An Huang, Liuyan Jiao
Estimating the term…
Embodiments for a power amplifier that can increase a low-frequency resonance frequency are provided. The power amplifier includes a power amplifying transistor die, a first metal oxide semiconductor capacitor, a direct current decoupling capacitor, and an output matching network, where: a drain of the power amplifying transistor die is connected to a first end of the first metal oxide semiconductor capacitor by using a bonding wire, and a second end of the first metal oxide semiconductor capacitor is grounded; the drain of the power amplifying transistor die is directly connected to the output matching network by using a bonding wire; a source of the power amplifying transistor die is grounded; the first end of the first metal oxide semiconductor capacitor is connected to one end of the direct current decoupling capacitor by using a bonding wire; and the other end of the direct current decoupling capacitor is grounded.
A power amplifier, comprising a power amplifying transistor die, a first metal oxide semiconductor capacitor, a direct current decoupling capacitor, and an output matching network, wherein:
A transmitter, comprising a power amplifier, wherein:
Dependencies are inferred from the claim text.